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PD- 94914
IRGIB15B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Low VCE (on) Non Punch Through IGBT Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient. * Maximum Junction Temperature Rated at 175C * Lead-Free
C
VCES = 600V IC = 12A, TC=100C
G E
tsc > 10s, TJ=150C
n-channel
VCE(on) typ. = 1.80V
Benefits
* Low EMI.
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VISOL VGE PD @ TC = 25C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
TO-220 Full-Pak
Max.
600 19 12 A 38 38 19 12 38 2500 20 52 26 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V
Units
V
c
Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw
PD @ TC = 100C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
RJC RJC RCS RJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.50 --- 2.0
Max.
2.9 4.6 --- 62 ---
Units
C/W
g
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1
12/30/03
IRGIB15B60KD1P
Parameter
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Min. Typ. Max. Units
-- 0.32 1.80 2.05 2.10 4.5 -10 10 1.0 163 829 1.69 1.31 1.25 --
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- -- VCE(on) Collector-to-Emitter Voltage -- -- VGE(th) Gate Threshold Voltage 3.5 VGE(th)/TJ Threshold Voltage temp. coefficient -- gfe Forward Transconductance -- -- ICES Zero Gate Voltage Collector Current -- -- VFM Diode Forward Voltage Drop -- -- -- IGES Gate-to-Emitter Leakage Current --
-- V VGE = 0V, IC = 500A -- V/C VGE = 0V, IC = 1mA (25C-150C) IC = 15A, VGE = 15V, TJ = 25C 2.20 2.50 V IC = 15A, VGE = 15V, TJ = 150C IC = 15A, VGE = 15V, TJ = 175C 2.60 5.5 V VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 1mA (25C-150C) -- S VCE = 50V, IC = 15A, PW = 80s VGE = 0V, VCE = 600V 150 500 A VGE = 0V, VCE = 600V, TJ = 150C VGE = 0V, VCE = 600V, TJ = 175C 1800 2.30 V IF = 15A, VGE = 0V IF = 15A, VGE = 0V, TJ = 150C 1.75 IF = 15A, VGE = 0V, TJ = 175C 1.65 100 nA VGE = 20V, VCE = 0V
5,6,7 9,10,11
9,10,11 12
8
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (PEAK) Erec trr Irr Qrr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Diode Reverse Recovery Charge
Min. Typ. Max. Units
-- 56 84 -- 7.0 10 -- 26 39 -- 127 140 -- 334 422 -- 461 556 -- 30 39 -- 25 35 -- 173 188 -- 41 53 -- 258 282 -- 570 646 -- 829 915 -- 30 39 -- 25 35 -- 194 207 -- 56 73 -- 7.5 -- -- 850 1275 -- 100 150 -- 32 48 FULL SQUARE 10 -- -- -- -- -- -- 140 267 67 23 984 -- -- 347 87 30 1279 nC
Conditions
IC = 15A VCC = 400V VGE = 15V IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 25C IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 25C
Ref.Fig.
23 CT1
CT4
J
d
ns
CT4
J
ns
IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 150C IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 150C
CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2
d
nH pF
Measured 5 mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150C, IC = 38A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 22 TJ = 150C, Vp = 600V, RG = 22 VCC=360V,VGE = +15V to 0V TJ = 150C VCC = 400V, IF = 15A, L = 1.07mH VGE = 15V, RG = 22 di/dt = 875A/s
22
4 CT2 CT3 WF4 WF4 17,18,19 20,21 CT4,WF3
s A J ns A nC
Vcc =80% (VCES), VGE = 15V, L =100H, RG = 22.
Energy losses include "tail" and diode reverse recovery.
2
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IRGIB15B60KD1P
20 55 50 16 45 40
Ptot (W)
12
IC (A)
35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 180 T C (C) 0 20 40 60 80 100 120 140 160 180 T C (C)
8
4
0
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
10 s 10
IC (A)
IC A)
10000
100 s 1 1ms
10
0.1 1 10 100 VCE (V)
DC 1000
1 10 100 1000
VCE (V)
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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3
IRGIB15B60KD1P
20 18 16 14
ICE (A)
20 18 16 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 14
ICE (A)
12 10 8 6 4 2 0 0 2
12 10 8 6 4 2 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
4 VCE (V)
6
0
2 VCE (V)
4
6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 60s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 60s
20 18 16 14
ICE (A)
70 60 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 50
IF (A)
-40C 25C 150C
12 10 8 6 4 2 0 0 2
40 30 20 10 0
4 VCE (V)
6
0.0
0.5
1.0
1.5 VF (V)
2.0
2.5
3.0
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 60s
Fig. 8 - Typ. Diode Forward Characteristics tp = 60s
4
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IRGIB15B60KD1P
20 18 16 14
VCE (V) VCE (V)
20 18 16 14 ICE = 7.5A ICE = 15A ICE = 30A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 7.5A ICE = 15A ICE = 30A
12 10 8 6 4 2 0
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14
VCE (V)
70 60 50
ICE (A)
T J = 25C T J = 150C
12 10 8 6 4 2 0 5 10
ICE = 7.5A ICE = 15A ICE = 30A
40 30 20 10 0
T J = 150C T J = 25C 0 5 VGE (V) 10 15
15 VGE (V)
20
Fig. 11 - Typical VCE vs. VGE TJ = 150C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
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5
IRGIB15B60KD1P
1400 1200 1000
Energy (J)
tdOFF
Swiching Time (ns)
1000
800 600 400 200 0 0 5 10 15 IC (A)
EOFF EON
100
tF tdON
10
tR
20
25
30
1 0 5 10 15 20 25 30
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1.07mH; VCE= 400V RG= 22; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=1.07mH; VCE= 400V RG= 22; VGE= 15V
1200
10000
1000
EOFF
800
Swiching Time (ns)
EON
1000
Energy (J)
600
tdOFF
400
100
200
tF tdON tR
0 50 100 150 200
0 0 50 100 150 200
10
RG ()
RG ()
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=1.07mH; VCE= 400V ICE= 15A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L=1.07mH; VCE= 400V ICE= 15A; VGE= 15V
6
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IRGIB15B60KD1P
25 24
20
RG = 22 RG = 47
20
16
IRR (A)
RG = 100
10
IRR (A)
25 30
15
12
RG = 200
5
8
4
0 0 5 10 15 20
0 0 40 80 120 160 200
IF (A)
RG ()
Fig. 17 - Typical Diode IRR vs. IF TJ = 150C
Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 15A
24
1500 30A
20
16
1000
Q RR (nC)
15A 7.5A
IRR (A)
12
8
500
200
100
47
22
4
0 0 200 400 600 800 1000
0 0 200 400 600 800 1000 diF /dt (A/s)
diF /dt (A/s)
Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 15A; TJ = 150C
Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C
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IRGIB15B60KD1P
200
160
Energy (J)
120
200
80
100 47 22
40 0 5 10 15 20 25
IF (A)
Fig. 21 - Typical Diode ERR vs. IF TJ = 150C
10000
16 14 300V Cies
VGE (V)
12 10 8 6
400V
Capacitance (pF)
1000
100
Coes Cres
4 2 0
10 0 20 40 60 80 100
0
20
40
60
80
VCE (V)
Q G, Total Gate Charge (nC)
Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 23 - Typical Gate Charge vs. VGE ICE = 15A; L = 2500H
8
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IRGIB15B60KD1P
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.02 0.01
J J 1 1 R1 R1 2 R2 R2 R3 R3 3 C 3
0.1
Ri (C/W) i (sec) 0.437 0.000542 1.087 1.376 0.127526 2.702
2
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4
Ri (C/W)
0.8631 0.6432 1.1937 1.9013
i (sec)
0.000202 0.001053 0.055415 2.335
0.1
1
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGIB15B60KD1P
L
L
0
DUT 1K
VCC
80 V
+ -
DUT Rg
480V
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
Driver
DC
diode clamp / DUT
L
360V
- 5V DUT / DRIVER
Rg
DUT
VCC
Fig.C.T.3 - S.C.SOA Circuit
VCC ICM
Fig.C.T.4 - Switching Loss Circuit
R=
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
10
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IRGIB15B60KD1P
600 500 400
90% ICE
30 tf 25 20
800 700 600 500 VCE (V)
TEST CURRENT
40 35 tr 30 25
90% test current
VCE (V)
ICE (A)
300 200 100 0
15 10 5 0
Eoff Loss
5% V CE 5% ICE
300 200 100 0 Eon Loss -100 0.2 0.4 time (s) 0.6
10% test current 5% V CE
15 10 5 0 -5
-100 0.1 0.3
-5 0.7
0.5 time(s)
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
100 0 -100 -200 -300 VF (V) -400 -500 -600 -700 -800 -900 0.10 0.20 0.30 time (S) 0.40
Peak IRR
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
450 400 350 300 400 350 300 250
20 QRR t RR 15 10 5
VCE (V)
-5 -10
10% Peak IRR
200 150 100 50 0 0 10 20 30 40 50
150 100 50 0 -50
-15 -20 -25 -30 0.50
Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4
Time (uS) Fig. WF4- Typ. S.C Waveform @ TC = 150C using Fig. CT.3
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ICE (A)
0 IF (A)
250
200
11
ICE (A)
400
20
IRGIB15B60KD1P
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E CT I F IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R
IR F I8 4 0 G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E CO D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K
TO-220 FullPak packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03
12
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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